Pulsed atomic layer epitaxy of quaternary AlInGaN layers
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Abstract
In this letter, we report on a material deposition scheme for quaternary AlxInyGa1-x-yN layers using a pulsed atomic layer epitaxy (PALE) technique. The PALE approach allows accurate control of the quaternary layer composition and thickness by simply changing the number of aluminum, indium, and gallium pulses in a unit cell and the number of unit cell repeats. Using PALE, AlInGaN layers with Al mole fractions in excess of 40% and strong room-temperature photoluminescence peaks at 280 nm can easily be grown even at temperatures lower than 800°C. © 2001 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Pulsed atomic layer epitaxy of quaternary AlInGaN layers</title><author><name sortKey="Zhang, J" uniqKey="Zhang J">J. Zhang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Kuokstis, E" uniqKey="Kuokstis E">E. Kuokstis</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Fareed, Q" uniqKey="Fareed Q">Q. Fareed</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Wang, H" uniqKey="Wang H">H. Wang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Yang, J" uniqKey="Yang J">J. Yang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Simin, G" uniqKey="Simin G">G. Simin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Asif Khan, M" uniqKey="Asif Khan M">M. Asif Khan</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Gaska, R" uniqKey="Gaska R">R. Gaska</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Sensor Electronic Technology, Incorporated, Latham, New York 12110</s1><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Sensor Electronic Technology, Incorporated, Latham</wicri:cityArea></affiliation></author><author><name sortKey="Shur, M" uniqKey="Shur M">M. Shur</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Sensor Electronic Technology, Incorporated, Latham, New York 12110</s1><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Sensor Electronic Technology, Incorporated, Latham</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0329073</idno><date when="2001-08-13">2001-08-13</date><idno type="stanalyst">PASCAL 01-0329073 AIP</idno><idno type="RBID">Pascal:01-0329073</idno><idno type="wicri:Area/Main/Corpus">010D07</idno><idno type="wicri:Area/Main/Repository">00FF11</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Atomic layer epitaxial growth</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Photoluminescence</term><term>Semiconductor epitaxial layers</term><term>Semiconductor growth</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8105E</term><term>8115E</term><term>8115G</term><term>8115H</term><term>7855C</term><term>7866F</term><term>Etude expérimentale</term><term>Méthode ALE</term><term>Photoluminescence</term><term>Couche épitaxique semiconductrice</term><term>Croissance semiconducteur</term><term>Semiconducteur III-V</term><term>Aluminium composé</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur bande interdite large</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this letter, we report on a material deposition scheme for quaternary Al<sub>x</sub>In<sub>y</sub>Ga<sub>1-x-y</sub>N layers using a pulsed atomic layer epitaxy (PALE) technique. The PALE approach allows accurate control of the quaternary layer composition and thickness by simply changing the number of aluminum, indium, and gallium pulses in a unit cell and the number of unit cell repeats. Using PALE, AlInGaN layers with Al mole fractions in excess of 40% and strong room-temperature photoluminescence peaks at 280 nm can easily be grown even at temperatures lower than 800°C. © 2001 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>79</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Pulsed atomic layer epitaxy of quaternary AlInGaN layers</s1></fA08><fA11 i1="01" i2="1"><s1>ZHANG (J.)</s1></fA11><fA11 i1="02" i2="1"><s1>KUOKSTIS (E.)</s1></fA11><fA11 i1="03" i2="1"><s1>FAREED (Q.)</s1></fA11><fA11 i1="04" i2="1"><s1>WANG (H.)</s1></fA11><fA11 i1="05" i2="1"><s1>YANG (J.)</s1></fA11><fA11 i1="06" i2="1"><s1>SIMIN (G.)</s1></fA11><fA11 i1="07" i2="1"><s1>ASIF KHAN (M.)</s1></fA11><fA11 i1="08" i2="1"><s1>GASKA (R.)</s1></fA11><fA11 i1="09" i2="1"><s1>SHUR (M.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>Sensor Electronic Technology, Incorporated, Latham, New York 12110</s1><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA20><s1>925-927</s1></fA20><fA21><s1>2001-08-13</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0329073</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>In this letter, we report on a material deposition scheme for quaternary Al<sub>x</sub>In<sub>y</sub>Ga<sub>1-x-y</sub>N layers using a pulsed atomic layer epitaxy (PALE) technique. The PALE approach allows accurate control of the quaternary layer composition and thickness by simply changing the number of aluminum, indium, and gallium pulses in a unit cell and the number of unit cell repeats. 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